| سال | هفته | ID | Title | ApplNo | IPC | Applicant | Subgroup | زیر گروه | رشته | شرح | Description |
|---|
2026 | 01 | WO/2026/001182 | METHOD AND SYSTEM FOR CONTROLLING CENTRAL OXYGEN CONTENT OF SILICON SINGLE CRYSTAL | CN2025/087835 | C30B 15/20 | INNER MONGOLIA ZHONGHUAN ADVANCED SEMICONDUCTOR MATERIALS CO., LTD. | CHEMISTRY; METALLURGY | علم شیمی؛ متالورژی | متالوژی | 2026 | 01 | WO/2026/004800 | β-Ga2O3 SINGLE CRYSTAL SUBSTRATE, β-Ga2O3 SINGLE-CRYSTAL INGOT, MELT SUPPLY MEMBER, β-Ga2O3 SINGLE CRYSTAL SUBSTRATE PRODUCTION METHOD, AND β-Ga2O3 SINGLE-CRYSTAL INGOT PRODUCTION METHOD | JP2025/022480 | C30B 29/16 | CENTRAL GLASS COMPANY, LIMITED | CHEMISTRY; METALLURGY | علم شیمی؛ متالورژی | متالوژی | 2026 | 01 | WO/2026/004873 | GALLIUM OXIDE CRYSTAL, METHOD FOR PRODUCING SAME, AND USE THEREOF | JP2025/022766 | C30B 29/16 | NATIONAL INSTITUTE FOR MATERIALS SCIENCE | CHEMISTRY; METALLURGY | علم شیمی؛ متالورژی | متالوژی | 2026 | 01 | WO/2026/005974 | REFLECTOR ASSEMBLIES FOR SUBSTRATE PROCESSING ADJUSTABILITY, AND RELATED PROCESS CHAMBERS, METHODS, AND SYSTEMS | US2025/032763 | C30B 25/10 | APPLIED MATERIALS, INC. | CHEMISTRY; METALLURGY | علم شیمی؛ متالورژی | متالوژی |